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| PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 1 MARCH 94 ZTX500 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE -25 -25 -5 -500 300 -55 to +175 UNIT V V V mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO MIN. TYP. -25 -25 -5 -0.2 -0.2 -0.35 -0.65 50 150 6 7 -1 300 MHz pF dB MAX. UNIT V V V A A CONDITIONS. IC=-10A IC=-5mA IE=-10A VCB=-25V VEB=-4V IC=-50mA, IB=-5mA* IC=-10mA, IB=-1mA* IC=-10mA, VCE=-6V* IC=-10mA, VCE=-6V f=100MHz VCB=-6V, f=1MHz IC=-100A, RS=1.5K f=1KHz Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) VBE(sat) V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance Noise Figure fT Cobo N 3-184 ZTX500 TYPICAL CHARACTERISTICS 0.95 0.25 0.90 0.20 VBE(sat) - (Volts) VCE(sat) - (Volts) 0.85 IC/IB=10 IC/IB=30 0.15 IC/IB=30 IC/IB=10 0.80 0.10 0.75 0.05 0.70 10 20 30 40 50 60 0 10 20 30 40 50 60 IC - Collector Current (mA) IC - Collector Current (mA) VBE(sat) v IC VCE(sat) v IC 50 IB=0.20mA 0.18mA 200 VCE=6V 40 0.16mA 0.14mA 0.12mA IC - (mA) 30 150 IC=10mA IC=50mA 20 hFE % 0.10mA 0.08mA 0.06mA 10 0.04mA 0.02mA 0 0 2 4 6 8 10 100 IC=100A 50 0 -100 -50 0 50 100 150 VCE - (V) Ambient Temperature (C) VCE v IC hFE v Ambient Temperature 150 -55C +25C +100C 0.14 IC=50mA IB=5mA 0.12 100 VCE(sat) - (Volts) hFE % 0.10 0.08 50 IC=10mA IB=1mA 0.06 0 0.1 1 10 100 1000 0.04 -100 -50 0 50 100 150 IC - Collector Current (mA) Ambient Temperature (C) hFE v IC VCE(sat) v Ambient Temperature 3-185 |
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